1 item symbol ratings unit remarks drain-source voltage v ds 600 v dsx 600 continuous drain current i d 16 pulsed drain current i d(puls] 64 gate-source voltage v gs 30 repetitive or non-repetitive i ar 16 maximum avalanche energy e as 242.7 maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 max. power dissipation p d 1.67 270 operating and storage t ch +150 temperature range t stg isolation voltage v iso 2 electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3688-01L,s,sj fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =600v v gs =0v v ds =480v v gs =0v v gs =30v i d =8a v gs =10v i d =8a v ds =25v v cc =300v i d =8a v gs =10v r gs =10 v v a na s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.463 75.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =300v i d =16a v gs =10v l=1.74mh t ch =25c i f =16a v gs =0v t ch =25c i f =16a v gs =0v -di/dt=100a/ s t ch =25c v v a a v a mj kv/ s kv/ s w c c kvrms 600 3.0 5.0 25 250 10 100 0.42 0.57 6.5 13 1590 2390 200 300 11 17 29 43.5 16 24 58 87 812 34 51 12 18 10 15 16 1.00 1.50 0.68 7.8 -55 to +150 outline drawings [mm] equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series *2 i f -i d , -di/dt=50a/ s, vcc bv dss , tch 150c = < = < = < 200509 = < *1 l=1.74mh, vcc=60v, see to avalanche energy graph v gs =-30v tch 150c *1 vds 600v *2 ta=25 c tc=25 c t=60sec, f=60hz = < p4 http://www.fujielectric.co.jp/fdt/scd/
2 characteristics 2SK3688-01L,s,sj fuji power mosfet 0 25 50 75 100 125 150 0 100 200 300 400 allowable power dissipation pd=f(tc) pd [w] tc [ c] 04812162024 0 10 20 30 40 50 7v 20v 10v 8v 6.5v vgs=6.0v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 0102030 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 rds(on) [ ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 8v 7v 6.5v vgs=6v -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 rds(on) [ ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=8a,vgs=10v
3 2SK3688-01L,s,sj fuji power mosfet -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250 a vgs(th) [v] tch [ c] 0 102030405060 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs=f(qg):id=16a,tch=25 c vgs [v] 480v 300v vcc= 120v 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 10 4 c [pf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id t=f(id):vcc=300v,vgs=10v,rg=10 td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 i as =7a i as =10a i as =16a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=60v,i(av)<=16a
4 2SK3688-01L,s,sj fuji power mosfet http://www.fujielectric.co.jp/fdt/scd/ outline drawings [mm] t-pack(l) t-pack(s) t-pack(sj) [d2-pack] 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=50v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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